 English |
|
|
|
|
|
|
|
| GP2030S Datasheet, PDF (3/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
| |||
| ◁ |
ISSUED DATE :2005/08/10
REVISED DATE :
P-Channel Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -20
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.037
-
Gate Threshold Voltage
VGS(th) -0.5
-
-1.0
Forward Transconductance
gfs
-
2.7
-
Gate-Source Leakage Current
IGSS
-
- Í100
Drain-Source Leakage Current(Tj=25к)
-
-
-1
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-25
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-5V, ID=-2.2A
nA VGS= Í12V
uA VDS=-20V, VGS=0
uA VDS=-16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
80
VGS=-4.5V, ID=-2.2A
mÓ¨
-
135
VGS=-2.5V, ID=-1.8A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
11.5
-
-
3.2
-
-
1.5
-
-
10
-
-
25
-
-
50
-
-
30
-
ID=-2.2A
nC VDS=-6V
VGS=-4.5V
VDS=-10V
ID=-2.2A
ns VGS=-4.5V
RG=6Ó¨
RD=4.5Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
940
-
-
440
-
-
130
-
VGS=0V
pF VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-0.75
-
Max.
-1.2
-1.7
Unit
Test Conditions
V IS=-1.8A, VGS=0V, Tj=25к
A VD=VG=0V, VS=-1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90к/W when mounted on Min. copper pad.
GP2030S
Page: 3/7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese