 English |
|
|
|
|
|
|
|
| GP2030S Datasheet, PDF (2/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
| |||
| ◁ |
ISSUED DATE :2005/08/10
REVISED DATE :
N-Channel Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
0.5
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-
0.037 -
-
1.2
3.6
-
- Í100
-
1
-
25
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=5V, ID=2.6A
nA VGS= Í12V
uA VDS=20V, VGS=0
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
60
VGS=4.5V, ID=2.6A
mÓ¨
-
90
VGS=2.5V, ID=1.8A
9
-
ID=2.6A
1
-
nC VDS=10V
4
-
VGS=4.5V
6.5
-
14
-
20
-
15
-
VDS=10V
ID=1A
ns VGS=4.5V
RG=6Ó¨
RD=10Ó¨
300
-
255
-
115
-
VGS=0V
pF VDS=8V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
1.2
1.7
Unit
Test Conditions
V IS=1.7A, VGS=0V, Tj=25к
A VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90к/W when mounted on Min. copper pad.
GP2030S
Page: 2/7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese