English
Language : 

GP2030S Datasheet, PDF (1/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/10
REVISED DATE :
GP2030S
N-CH BVDSS 20V
N-CH RDS(ON) 60m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
2.6A
P-CH BVDSS -20V
N-CH RDS(ON) 80m
Description
N-CH ID
-2.3A
The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
D
GAUGE PLANE
SEATING PLANE
ZZ
be
b
SECTION Z - Z
DIP-8
REF.
A
A1
A2
b
b1
b2
b3
c
Millimeter
Min.
Max.
-
0.5334
0.381
-
2.921
4.953
0.356
0.559
0.356
0.508
1.143
1.778
0.762
1.143
0.203
0.356
REF.
c1
D
E
E1
e
HE
L
Millimeter
Min.
Max.
0.203
0.279
9.017
10.16
6.096
7.112
7.620
8.255
2.540 BSC
-
10.92
2.921
3.810
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
N-channel P-channel
20
-20
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
VGS
ID @TA=25к
ID @TA=70к
IDM
f12
2.6
2.1
15
f12
-2.3
-1.8
-10
Total Power Dissipation
PD @TA=25к
2.0
Linear Derating Factor
0.016
Operating Junction and Storage Temperature Range Tj, Tstg
-55 ~ +150
Unit
V
V
A
A
A
W
W/ć
ć
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Unit
ć/W
GP2030S
Page: 1/7