GS78108AB Datasheet, PDF (7/11 Pages) GSI Technology – 1M x 8 8Mb Asynchronous SRAM

Address
OE
CE
WE
Data In
Data Out
Address
OE
CE
WE
Data In
Data Out
Write Cycle 1: WE Controlled
t_WC
t_AW
t_WR
t_CW
t_AS
t_WP
t_WHZ
t_DW
t_DH
Data valid
t_WLZ
High impedance
Write Cycle 2: CE Controlled
t_WC
t_AW
t_WR1
t_AS
t_CW
t_WP
t_DW
t_DH
Data valid
High impedance
GS78108AB
Rev: 1.04 5/2006
7/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology