GS78108AB Datasheet, PDF (1/11 Pages) GSI Technology – 1M x 8 8Mb Asynchronous SRAM

GS78108AB
BGA
Commercial Temp
Industrial Temp
1M x 8
8Mb Asynchronous SRAM
8, 10, 12 ns
3.3 V V_DD
Features
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 240/190/170 mA at minimum
cycle time
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array
package
• RoHS-compliant package available
Symbol
A0 to A19
DQ1 to DQ8
CE
WE
OE
V_DD
Description
V_SS
The GS78108A is a high speed CMOS Static RAM organized
NC
as 1,048,576-words by 8-bits. Static design eliminates the need
for external clocks or timing strobes. The GS78108operates on
a single 3.3 V power supply, and all inputs and outputs are
TTL-compatible. The GS7810A8 is available in a
14 mm x 22 mm BGA package.
Block Diagram
Pin Descriptions
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
A0
Row
Decoder
Address
Input
Buffer
A19
CE
WE
OE
Control
Memory Array
Column
Decoder
I/O Buffer
DQ1
DQ8
Rev: 1.04 5/2006
1/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology