GS78108AB Datasheet, PDF (3/11 Pages) GSI Technology – 1M x 8 8Mb Asynchronous SRAM

GS78108AB
Truth Table
CE
OE
WE
H
X
X
L
L
H
L
X
L
L
H
H
X: “H” or “L”
DQ1 to DQ8
Not Selected
Read
Write
High Z
V_DD Current
ISB1, ISB2
—
I_DD
—
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
V_DD
V_IN
V_OUT
PD
T_STG
–0.5 to +4.6
V
–0.5 to V_DD +0.5
V
(≤ 4.6 V max.)
–0.5 to V_DD +0.5
V
(≤ 4.6 V max.)
1.5
W
–55 to 150
o_C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8/10/12
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
V_DD
3.0
3.3
3.6
V
V_IH
2.0
—
V_DD +0.3
V
V_IL
–0.3
—
0.8
V
T_Ac
0
—
70
o_C
T_Ai
–40
—
85
o_C
Notes:
1. Input overshoot voltage should be less than V_DD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.04 5/2006
3/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology