GS72108TP-10 Datasheet, PDF (5/12 Pages) GSI Technology – 256K x 8 2Mb Asynchronous SRAM

Power Supply Currents
Parameter Symbol Test Conditions
Operating
Supply
Current
Standby
Current
Standby
Current
IDD (max)
ISB1 (max)
ISB2 (max)
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
CE ≥ V_DD - 0.2 V
All other inputs
≥ V_DD – 0.2 V or
≤ 0.2 V
0 to 70°C
8 ns 10 ns 12 ns
150 mA 125 mA 110 mA
55 mA 50 mA 45 mA
15 mA
15 ns
90 mA
40 mA
GS72108TP/J
–40 to 85°C
10 ns 12 ns 15 ns
135 mA 120 mA 100 mA
60 mA 55 mA 50 mA
25 mA
AC Test Conditions
Parameter
Conditions
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
VIH = 2.4 V
VIL = 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
Output Load 1
DQ
50Ω 30pF¹
VT = 1.4 V
Output Load 2
3.3 V
DQ
589Ω
5pF^{1 434Ω}
Rev: 1.08 7/2002
5/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.