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GS72108TP-10 Datasheet, PDF (3/12 Pages) GSI Technology – 256K x 8 2Mb Asynchronous SRAM
Truth Table
CE
OE
WE
H
X
X
L
L
H
L
X
L
L
H
H
Note: X: “H” or “L”
DQ1 to DQ8
Not Selected
Read
Write
High Z
GS72108TP/J
VDD Current
ISB1, ISB2
IDD
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to VDD +0.5
(≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to VDD +0.5
(≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
oC
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Rev: 1.08 7/2002
3/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.