GS78116AB Datasheet, PDF (4/11 Pages) GSI Technology – 512K x 16 8Mb Asynchronous SRAM

Capacitance
Parameter
Symbol
Input Capacitance
Output Capacitance
C_IN
C_OUT
Notes:
1. Tested at T_A = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested
Test Condition
Max
V_IN = 0 V
10
V_OUT = 0 V
7
DC I/O Pin Characteristics
Parameter
Input Leakage Current
Symbol
I_IL
Output Leakage Current
I_OL
Output High Voltage
V_OH
Output Low Voltage
V_OL
Test Conditions
V_IN = 0 to V_DD
Output High Z,
V_OUT = 0 to V_DD
I_OH = –4 mA
I_OL = +4 mA
Min
–2 uA
–1 uA
2.4
GS78116AB
Unit
pF
pF
Max
2 uA
1 uA
0.4 V
Power Supply Currents
Parameter Symbol
Operating
Supply
I_DD
Current
Standby
Current
I_SB1
Standby
Current
I_SB2
Test Conditions
E ≤ V_IL
All other inputs
≥ V_IH or ≤ V_IL
Min. cycle time
I_OUT = 0 mA
E ≥ V_IH
All other inputs
≥ V_IH or ≤V_IL
Min. cycle time
E ≥ V_DD - 0.2V
All other inputs
≥ V_DD - 0.2V or ≤ 0.2V
0 to 70°C
8 ns 10 ns 12 ns
–40 to 85°C
8 ns 10 ns 12 ns
160 mA 130 mA 115 mA 180 mA 150 mA 135 mA
60 mA 50 mA 50 mA 80 mA 70 mA 70 mA
20 mA
40 mA
Rev: 1.04 5/2006
4/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology