GS76024AB Datasheet, PDF(4/12 Page) GSI Technology – 256K x 24 6Mb Asynchronous SRAM

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GS76024AB Datasheet, PDF (4/12 Pages) GSI Technology – 256K x 24 6Mb Asynchronous SRAM

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Capacitance

Parameter

Symbol

Input Capacitance

I/O Capacitance

CIN

COUT

Notes:

1. Tested at TA = 25Â°C, f = 1 MHz

2. These parameters are sampled and are not 100% tested

Test Condition

Max

VIN = 0 V

VOUT = 0 V

DC I/O Pin Characteristics

Parameter

Input Leakage Current

Symbol

IIL

Output Leakage Current

IOL

Output High Voltage

VOH

Output Low Voltage

VOL

Test Conditions

VIN = 0 to VDD

Output High Z, VOUT = 0

to VDD

IOH = â4 mA

IOL = +4 mA

Min

â2 uA

â1 uA

2.4

GS76024AB

Unit

Max

2 uA

1 uA

0.4 V

Rev: 1.02 12/2005

4/12

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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