GS76024AB Datasheet, PDF (1/12 Pages) GSI Technology – 256K x 24 6Mb Asynchronous SRAM

GS76024AB
BGA
Commercial Temp
Industrial Temp
256K x 24
6Mb Asynchronous SRAM
8, 10, 12 ns
3.3 V V_DD
Center V_DD and V_SS
Features
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 260/210/180 mA at minimum
cycle time
• Single 3.3 V ± 0.3V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40 to 85°C
• Package
B: 14 mm x 22 mm, 119-bump, 1.27 mm pitch BGA
Description
The GS76024A is a high speed CMOS static RAM organized
as 262,144 words by 24 bits. Static design eliminates the need
for external clocks or timing strobes. Operating on a single
3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS76024A is available in a 119-bump BGA
package.
119-bump Ball Grid Array Package
A0
A17
CE
WE
OE
Pin Descriptions
Symbol
A0 to A17
WE
CE
V_DD
Block Diagram
Address
Input
Row
Decoder
Control
Memory Array
Column
Decoder
I/O Buffer
DQ1
DQ24
Description
Address input
Write enable input
Chip enable input
+3.3V power supply
Symbol
DQ1 to DQ24
OE
V_SS
Description
Data input/output
Output enable input
Ground
Rev: 1.02 12/2005
1/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology