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GS74104ATP Datasheet, PDF (4/11 Pages) GSI Technology – 1M x 4 4Mb Asynchronous SRAM | |||
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GS74104ATP/J
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
IIL
Output Leakage
Current
ILO
Output High Voltage
VOH
Output Low Voltage
VOL
VIN = 0 to VDD
Output High Z
VOUT = 0 to VDD
IOH = â4mA
ILO = +4mA
â 1 uA
â1 uA
2.4
â
1 uA
1 uA
â
0.4 V
Power Supply Currents
Parameter Symbol
Operating
Supply
IDD
Current
Standby
Current
ISB1
Standby
Current
ISB2
Test Conditions
CE ⤠VIL
All other inputs
⥠VIH or ⤠VIL
Min. cycle time
IOUT = 0 mA
CE ⥠VIH
All other inputs
⥠VIH or â¤VIL
Min. cycle time
CE ⥠VDD - 0.2V
All other inputs
⥠VDD - 0.2V or ⤠0.2V
0 to 70°C
8 ns
10 ns
120 mA 95 mA
30 mA
25 mA
10 mA
12 ns
85 mA
22 mA
â40 to 85°C
8 ns
10 ns
12 ns
130 mA 105 mA 95 mA
40 mA
35 mA
32 mA
20 mA
Rev: 1.06 6/2006
4/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
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