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GS8170DW36C Datasheet, PDF (24/27 Pages) GSI Technology – 18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36/72C-333/300/250/200
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Max.
Unit Notes
1.8 V Test Port Input High Voltage
VIHJ2
0.6 * VDD
VDD +0.3
V
1
1.8 V Test Port Input Low Voltage
TMS, TCK and TDI Input Leakage Current
TMS, TCK and TDI Input Leakage Current
TDO Output Leakage Current
VILJ2
–0.3
IINHJ
–300
IINLJ
–1
IOLJ
–1
0.3 * VDD
1
100
1
V
1
uA
2
uA
3
uA
4
Test Port Output High Voltage
VOHJ
1.7
—
V 5, 6
Test Port Output Low Voltage
VOLJ
—
0.4
V 5, 7
Test Port Output CMOS High
VOHJC VDDQ – 100 mV
—
V 5, 8
Test Port Output CMOS Low
VOLJC
—
100 mV
V 5, 9
Notes:
1. Input Under/overshoot voltage must be –2 V > Vi < VDDn +2 V not to exceed 2.5 V maximum, with a pulse width not to exceed 20% tTKC.
2. VILJ ≤ VIN ≤ VDDn
3. 0 V ≤ VIN ≤ VILJn
4. Output Disable, VOUT = 0 to VDDn
5. The TDO output driver is served by the VDDQ supply.
6. IOHJ = –4 mA
7. IOLJ = + 4 mA
8. IOHJC = –100 uA
9. IOHJC = +100 uA
JTAG Port Timing Diagram
TCK
TDI
TMS
TDO
Parallel SRAM input
tTKC
tTKH
tTH
tTS
tTH
tTS
tTKQ
tTH
tTS
tTKL
Rev: 2.04 5/2005
24/27
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2002, GSI Technology, Inc.