GS816118BT Datasheet, PDF (19/35 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

GS816118B(T/D)/GS816132B(D)/GS816136B(T/D)
Operating Currents
-250
-200
-150
Parameter
Test Conditions
Mode
Symbol
0
–40
0
–40
0
–40 _Unit
to
to
to
to
to
to
70°C 85°C 70°C 85°C 70°C 85°C
Operating
Current
Device Selected;
All other inputs
≥V_IH or ≤ V_IL
Output open
Pipeline
(x32/
I_DD
I_DDQ
x36)
Flow Through
I_DD
I_DDQ
Pipeline
I_DD
I_DDQ
(x18)
Flow Through
I_DD
I_DDQ
305
40
315
40
255
30
265
30
205
20
215
20
mA
235
20
245
20
205
15
215
15
190
15
200
15
mA
275
20
285
20
230
15
240
15
185
15
195
15
mA
215
10
225
10
190
10
200
10
175
10
185
10
mA
Standby
Current
ZZ ≥ V_DD – 0.2 V
Pipeline
I_SB
—
Flow Through
I_SB
40
50
40
50
40
50
mA
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥ V_IH or ≤ V_IL
Pipeline
I_DD
—
Flow Through
I_DD
85
90
75
80
60
65
mA
60
65
50
55
50
55
mA
Notes:
1. I_DD and I_DDQ apply to any combination of V_DD3, V_DD2, V_DDQ3, and V_DDQ2 operation.
2. All parameters listed are worst case scenario.
Rev: 1.03 9/2005
19/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology