GS81302R08 Datasheet, PDF (17/35 Pages) GSI Technology – 144Mb SigmaDDRTM-II Burst of 4 SRAM

GS81302R08/09/18/36E-375/350/333/300/250
Operating Currents
-375
-350
-333
-300
-250
Parameter
Symbol
Test Conditions
0 –40 0 –40 0 –40 0 –40 0 –40 ^Notes
to to to to to to to to to to
70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C
Operating Current (x36):
DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time ≥ t_KHKH Min
940 950 895 905 850 860 780 790 670 680
mA mA mA mA mA mA mA mA mA mA
2, 3
Operating Current (x18):
DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time ≥ t_KHKH Min
845 855 800 810 755 765 690 700 595 605
mA mA mA mA mA mA mA mA mA mA
2, 3
Operating Current (x9):
DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time ≥ t_KHKH Min
845 855 800 810 755 765 690 700 595 605
mA mA mA mA mA mA mA mA mA mA
2, 3
Operating Current (x8):
DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time ≥ t_KHKH Min
845 855 800 810 755 765 690 700 595 605
mA mA mA mA mA mA mA mA mA mA
2, 3
Standby Current (NOP):
DDR
Device deselected,
I_SB1
I^OUT = 0 mA, f = Max,
All Inputs ≤ 0.2 V or ≥ V_DD – 0.2 V
280
mA
290
mA
275
mA
285
mA
270
mA
280
mA
260
mA
270
mA
245
mA
255
mA
2, 4
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, I_OUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
Rev: 1.03b 12/2011
17/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology