GS8182S08 Datasheet, PDF (16/36 Pages) GSI Technology – 18Mb Burst of 2 SigmaSIO DDR-IITM SRAM

GS8182S08/09/18/36BD-400/375/333/300/250/200/167
AC Test Conditions
Parameter
Input high level
Input low level
Max. input slew rate
Input reference level
Output reference level
Note:
Test conditions as specified with output loading as shown unless otherwise noted.
Conditions
V_DDQ
0V
2 V/ns
V_DDQ/2
V_DDQ/2
AC Test Load Diagram
DQ
RQ = 250 Ω (HSTL I/O)
50Ω
V_REF = 0.75 V
VT = V_DDQ/2
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
I_IL
Doff
I_INDOFF
Output Leakage Current
I_OL
Test Conditions
V_IN = 0 to V_DD
V_DD ≥ V_IN ≥ V_IL
0 V ≤ V_IN ≤ V_IL
Output Disable,
V_OUT = 0 to V_DDQ
Min.
Max
–2 uA
2 uA
–100 uA
2 uA
–2 uA
2 uA
–2 uA
2 uA
Rev: 1.03c 11/2011
16/36
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2007, GSI Technology