GS8170DD36C Datasheet, PDF (16/29 Pages) GSI Technology – 18Mb Σ1x2Lp CMOS I/O Double Data Rate SigmaRAM

GS8170DD36C-333/300/250/200
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZQ, MCH, MCL, EP2, EP3
Pin Input Current
Symbol
I_IL
I_INM
Output Leakage Current
I_OL
Test Conditions
V_IN = 0 to V_DDQ
V_IN = 0 to V_DDQ
Output Disable,
V_OUT = 0 to V_DDQ
Min.
–2 uA
–50 uA
–2 uA
Max Notes
2 uA
—
50 uA
—
2 uA
—
Selectable Impedance Output Driver DC Electrical Characteristics
Parameter
Symbol
Low Drive Output High Voltage
V_OHL
Low Drive Output Low Voltage
V_OLL
High Drive Output High Voltage
V_OHH
High Drive Output Low Voltage
V_OLH
Notes:
1. ZQ = 1; High Impedance output driver setting
2. ZQ = 0; Low Impedance output driver setting
Test Conditions
I_OHL = –4 mA
I_OLL = 4 mA
I_OHH = –8 mA
I_OLH = 8 mA
Min.
V_DDQ – 0.4 V
—
V_DDQ – 0.4 V
—
Max Notes
—
1
0.4 V
1
—
2
0.4 V
2
Operating Currents
Parameter
Symbol
Operating
Current
x36
I_DDP (PL)
Chip Disable
Current
x36
I_SB1 (PL)
Bank Deselect
Current
x36
I_SB2 (PL)
CMOS
Deselect
I_DD3
Current
-333
0°C –40°C
to
to
70°C +85°C
345 mA 355 mA
75 mA 85 mA
75 mA 85 mA
45 mA 55 mA
-300
0°C –40°C
to
to
70°C +85°C
320 mA 330 mA
70 mA 80 mA
70 mA 80 mA
45 mA 55 mA
-250
0°C –40°C
to
to
70°C +85°C
275 mA 285 mA
65 mA 75 mA
65 mA 75 mA
45 mA 55 mA
-200
0°C –40°C
to
to
70°C +85°C
225 mA 235 mA
60 mA 70 mA
60 mA 70 mA
45 mA 55 mA
Test Conditions
E1 ≤ V_IL Max.
tKHKH ≥ tKHKH Min.
All other inputs
V_IL ≥ V_IN ≥ V_IH
E1 ≥ V_IH Min. or
tKHKH ≥ tKHKH Min.
All other inputs
V_IL ≥ V_IN ≥ V_IH
E2 or E3 False
tKHKH ≥ tKHKH Min.
All other inputs
V_IL ≥ V_IN ≥ V_IH
Device Deselected
All inputs
V_SS + 0.10 V
≥ V_IN ≥
V_DD – 0.10 V
Rev: 2.03 1/2005
16/29
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2002, GSI Technology, Inc.