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GS8321Z18 Datasheet, PDF (15/34 Pages) GSI Technology – 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8321Z18/32/36E-250/225/200/166/150/133
VDD2 Range Logic Levels
Parameter
Input High Voltage
Input Low Voltage
Note:
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Symbol
VIH
VIL
Min.
0.6*VDD
–0.3
Typ.
Max.
Unit
—
VDD + 0.3
V
—
0.3*VDD
V
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
Ambient Temperature (Industrial Range Versions)*
TA
–40
25
85
°C
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Thermal Impedance
Package
Test PCB
Substrate
θ JA (C°/W)
Airflow = 0 m/s
θ JA (C°/W)
Airflow = 1 m/s
θ JA (C°/W)
Airflow = 2 m/s
θ JB (C°/W) θ JC (C°/W)
165 BGA
4-layer
15.9
13.2
11.6
4.5
2.0
Notes:
1. Thermal Impedance data is based on a number of of samples from mulitple lots and should be viewed as a typical number.
2. Please refer to JEDEC standard JESD51-6.
3. The characteristics of the test fixture PCB influence reported thermal characteristics of the device. Be advised that a good thermal path to
the PCB can result in cooling or heating of the RAM depending on PCB temperature.
Undershoot Measurement and Timing
Overshoot Measurement and Timing
VIH
20% tKC
VDD + 2.0 V
VSS
50%
50%
VDD
VSS – 2.0 V
20% tKC
VIL
Note:
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Rev: 1.08 2/2011
15/34
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology