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GS8128036GT-200IV Datasheet, PDF (14/23 Pages) GSI Technology – 8M x 18, 4M x 32, 4M x 36 144Mb Sync Burst SRAMs
GS8128018/32/36GT-xxxV
AC Test Conditions
Parameter
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
Conditions
VDD – 0.2 V
0.2 V
1 V/ns
VDD/2
VDDQ/2
Fig. 1
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
FT Input Current
Output Leakage Current
1.8 V Output High Voltage
2.5 V Output High Voltage
1.8 V Output Low Voltage
2.5 V Output Low Voltage
Output Load 1
DQ
50
30pF*
VDDQ/2
* Distributed Test Jig Capacitance
Symbol
IIL
IIN
IOL
VOH1
VOH2
VOL1
VOL2
Test Conditions
VIN = 0 to VDD
VDD  VIN  0 V
Output Disable, VOUT = 0 to VDD
IOH = –4 mA, VDDQ = 1.7 V
IOH = –8 mA, VDDQ = 2.375 V
IOL = 4 mA
IOL = 8 mA
Min
–1 uA
–100 uA
–1 uA
VDDQ – 0.4 V
1.7 V
—
—
Max
1 uA
100 uA
1 uA
—
—
0.4 V
0.4 V
Rev: 1.01 5/2017
14/22
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2015, GSI Technology