GS8128036GT-200IV Datasheet, PDF (12/23 Pages) GSI Technology – 8M x 18, 4M x 32, 4M x 36 144Mb Sync Burst SRAMs

GS8128018/32/36GT-xxxV
Absolute Maximum Ratings
(All voltages reference to V_SS)
Symbol
Description
Value
Unit
V_DD
Voltage on V_DD Pins
–0.5 to 4.6
V
V_DDQ
Voltage in V_DDQ Pins
–0.5 to 4.6
V
V_I/O
Voltage on I/O Pins
–0.5 to V_DD +0.5 ( 4.6 V max.)
V
V_IN
Voltage on Other Input Pins
–0.5 to V_DD +0.5 ( 4.6 V max.)
V
I_IN
Input Current on Any Pin
+/–20
mA
I_OUT
Output Current on Any I/O Pin
+/–20
mA
P_D
Package Power Dissipation
1.5
W
T_STG
Storage Temperature
–55 to 125
o_C
T_BIAS
Temperature Under Bias
–55 to 125
o_C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
1.8 V Supply Voltage
2.5 V Supply Voltage
1.8 V V_DDQ I/O Supply Voltage
2.5 V V_DDQ I/O Supply Voltage
Symbol
Min.
Typ.
Max.
Unit
V_DD1
1.7
1.8
2.0
V
V_DD2
2.3
2.5
2.7
V
V_DDQ1
1.7
1.8
V_DD
V
V_DDQ2
2.3
2.5
V_DD
V
V_DDQ2 & V_DDQ1 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
V_DD Input High Voltage
V_IH
0.6*V_DD
—
V_DD + 0.3
V
V_DD Input Low Voltage
V_IL
–0.3
—
0.3*V_DD
V
Note:
Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device.
Rev: 1.01 5/2017
12/22
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2015, GSI Technology