GS815018AB Datasheet, PDF (10/25 Pages) GSI Technology – 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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GS815018/36AB-357/333/300/250
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZQ, MCH, MCL, EP2, EP3
Pin Input Current
Symbol
I_IL
I_INM
Output Leakage Current
I_OL
Test Conditions
V_IN = 0 to V_DDQ
V_IN = 0 to V_DDQ
Output Disable,
V_OUT = 0 to V_DDQ
Min.
–1 uA
–100 uA
–1 uA
Max Notes
1 uA
—
1 uA
—
1 uA
—
Operating Currents
Parameter
Symbol
x36
I_DD
Operating
Current
x18
I_DD
HSTL
Deselect
I_DD3
Current
-357
0°C –40°C
to
to
70°C +85°C
650 mA 660 mA
600 mA 610 mA
150 mA 160 mA
-333
0°C –40°C
to
to
70°C +85°C
600 mA 610 mA
550 mA 560 mA
150 mA 160 mA
-300
0°C –40°C
to
to
70°C +85°C
550 mA 560 mA
500 mA 510 mA
150 mA 160 mA
-250
0°C –40°C
to
to
70°C +85°C
500 mA 510 mA
450 mA 460 mA
150 mA 160 mA
Test Conditions
SS ≤ V_IL Max.
tKHKH ≥ tKHKH Min.
All other inputs
V_IL ≥ V_IN ≥ V_IH
Device Deselected
All inputs
V_SS + 0.10 V
≥ V_IN ≥
V_DD – 0.10 V
Rev: 1.05 10/2005
10/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology