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GA04JT17-247 Datasheet, PDF (9/12 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor | |||
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GA04JT17-247
Figure 25: Typical steady state gate current supplied by the
GA03IDDJT30-FR4 board for the GA04JT17-247 with the on
board resistance of 3.75 â¦
Figure 26: Maximum gate resistance for safe operation of
the GA04JT17-247 at different drain currents using the
GA03IDDJT30-FR4 board.
B:2: High Speed, Low Loss Drive with Boost Inductor
A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the GA04JT17-247 at high-speed. It utilizes a gate drive inductor
instead of a capacitor to provide the high-current gate current pulses IG,on and IG,off. During operation, inductor L is charged to a specified IG,on
current value then made to discharge IL into the SJT gate pin using logic control of S1, S2, S3, and S4, as shown in Figure 27. After turn on,
while the device remains on the necessary steady state gate current IG,steady is supplied from source VCC through RG. Please refer to the
article âA current-source concept for fast and efficient driving of silicon carbide transistorsâ by Dr. Jacek RÄ
bkowski for additional information
on this driving topology.4
Figure 27: Simplified Inductive Pulsed Drive Topology
3 â RG = (1/RG1 +1/RG2)-1. Driver is pre-installed with RG1 = RG2 = 7.5 â¦
4 â Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333â343, ISSN (Print) 0004-0746, DOI: 10.2478/aee-2013-0026, June 2013
Nov 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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