GA04JT17-247 Datasheet, PDF (2/12 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
A: On State
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
B: Off State
R_DS(ON)
V_GS,SAT
h_FE
I_D = 4 A, T_j = 25 °C
I_D = 4 A, T_j = 125 °C
I_D = 4 A, T_j = 175 °C
I_D = 4 A, I_D/I_G = 40, T_j = 25 °C
I_D = 4 A, I_D/I_G = 30, T_j = 175 °C
V_DS = 5 V, I_D = 5 A, T_j = 25 °C
V_DS = 5 V, I_D = 5 A, T_j = 125 °C
V_DS = 5 V, I_D = 5 A, T_j = 175 °C
Drain Leakage Current
Gate Leakage Current
C: Thermal
Thermal resistance, junction - case
V_DS = 1700 V, V_GS = 0 V, T_j = 25 °C
I_DSS
V_DS = 1700 V, V_GS = 0 V, T_j = 125 °C
V_DS = 1700 V, V_GS = 0 V, T_j = 175 °C
I_SG
V_SG = 20 V, T_j = 25 °C
R_thJC
Section III: Dynamic Electrical Characteristics
GA04JT17-247
Min.
Value
Typical
Max. ^Unit
Notes
220
357
mΩ
Fig. 5
463
3.33
3.09
V
Fig. 7
80
58
–
Fig. 5
51
0.1
0.1
μA
Fig. 8
30
20
nA
1.41
°C/W Fig. 20
Parameter
Symbol
Conditions
Min.
A: Capacitance and Gate Charge
Input Capacitance
Reverse Transfer/Output Capacitance
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
B: Switching¹
C_iss
C_rss/C_oss
E_OSS
C_oss,tr
V_GS = 0 V, V_DS = 1200 V, f = 1 MHz
V_DS = 1200 V, f = 1 MHz
V_GS = 0 V, V_DS = 1200 V, f = 1 MHz
I_D = constant, V_GS = 0 V, V_DS = 0…1200 V
C_oss,er
Q_GS
Q_GD
Q_G
V_GS = 0 V, V_DS = 0…1200 V
V_GS = -5…3 V
V_GS = 0 V, V_DS = 0…1200 V
Internal Gate Resistance – zero bias
Internal Gate Resistance – ON
Turn On Delay Time
Fall Time, V_DS
Turn Off Delay Time
Rise Time, V_DS
Turn On Delay Time
Fall Time, V_DS
Turn Off Delay Time
Rise Time, V_DS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
R_G(INT-ZERO)
R_G(INT-ON)
t_d(on)
t_f
t_d(off)
t_r
t_d(on)
t_f
t_d(off)
t_r
E_on
E_off
E_tot
E_on
E_off
E_tot
f = 1 MHz, V_AC = 50 mV, V_DS = 0 V,
V_GS = 0 V, T_j = 175 ºC
V_GS > 2.5 V, V_DS = 0 V, T_j = 175 ºC
T_j = 25 ºC, V_DS = 1200 V,
I_D = 4 A, Resistive Load
Refer to Section V for additional
driving information.
T_j = 175 ºC, V_DS = 1200 V,
I_D = 4 A, Resistive Load
T_j = 25 ºC, V_DS = 1200 V,
I_D = 4 A, Inductive Load
Refer to Section V.
T_j = 175 ºC, V_DS = 1200 V,
I_D = 4 A, Inductive Load
1 _{– All times are relative to the Drain-Source Voltage VDS}
Value
Typical
665
16
12
29
21
5
35
40
5.9
0.35
8
15
21
32
12
12
37
32
137
20
157
146
21
167
Max. ^{Unit Notes}
pF
Fig. 9
pF
Fig. 9
µJ Fig. 10
pF
pF
nC
nC
nC
Ω
Ω
ns
ns Fig. 11, 13
ns
ns Fig. 12, 14
ns
ns Fig. 11
ns
ns Fig. 12
µJ Fig. 11, 13
µJ Fig. 12, 14
µJ
µJ Fig. 11
µJ Fig. 12
µJ
Nov 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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