GA10JT12-CAL Datasheet, PDF (8/8 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

GA10JT12-CAL
Section VIII: SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/sjt/GA10JT12-CAL_SPICE.pdf) into LTSPICE
(version 4) software for simulation of the GA10JT12-CAL.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision: 2.0
$
*
$Date: 12-SEP-2014
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model GA10JT12 NPN
+ IS
5.00E-47
+ ISE
1.26E-28
+ EG
3.23
+ BF
85
+ BR
0.55
+ IKF
5000
+ NF
1
+ NE
2
+ RB
4.67
+ IRB
0.001
+ RBM
0.16
+ RE
0.005
+ RC
0.099
+ CJC
427.39E-12
+ VJC
3.1004
+ MJC
0.4752
+ CJE
1373E-12
+ VJE
10.6442
+ MJE
0.21376
+ XTI
3
+ XTB
-1.27
+ TRC1
6.8E-3
+ VCEO
1200
+ ICRATING 10
+ MFG
GeneSiC_Semiconductor
*
* End of GA10JT12 SPICE Model
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 1