GA10JT12-CAL Datasheet, PDF (2/8 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
A: On State
Drain – Source On Resistance
Gate On Voltage
DC Current Gain
B: Off State
R_DS(ON)
V_GS,ON
h_FE
I_D = 10 A, T_j = 25 °C
I_D = 10 A, T_j = 125 °C
I_D = 10 A, T_j = 175 °C
I_D = 10 A, V_DS = 30 V, T_j = 25 °C
I_D = 10 A, V_DS = 30 V, T_j = 175 °C
V_DS = 5 V, I_D = 10 A, T_j = 25 °C
V_DS = 5 V, I_D = 10 A, T_j = 125 °C
V_DS = 5 V, I_D = 10 A, T_j = 175 °C
Drain Leakage Current
Gate Leakage Current
V_DS = 1200 V, V_GS = 0 V, T_j = 25 °C
I_DSS
V_DS = 1200 V, V_GS = 0 V, T_j = 125 °C
V_DS = 1200 V, V_GS = 0 V, T_j = 175 °C
I_SG
V_SG = 20 V, T_j = 25 °C
Section III: Dynamic Electrical Characteristics
GA10JT12-CAL
Min.
Value
Typical
Max. ^Unit
Notes
120
164
mΩ
Fig. 5
208
3.5
3.2
V
Fig. 4
80
56
–
Fig. 5
50
1
1
μA
Fig. 6
10
20
nA
Parameter
Input Capacitance
Reverse Transfer/Output Capacitance
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
Internal Gate Resistance – zero bias
Internal Gate Resistance – ON
Symbol
C_iss
C_rss/C_oss
E_OSS
C_oss,tr
Conditions
V_GS = 0 V, V_DS = 800 V, f = 1 MHz
V_DS = 800 V, f = 1 MHz
V_GS = 0 V, V_DS = 800 V, f = 1 MHz
I_D = constant, V_GS = 0 V, V_DS = 0…800 V
Min.
C_oss,er
V_GS = 0 V, V_DS = 0…800 V
Q_GS
Q_GD
Q_G
R_G(INT-ZERO)
R_G(INT-ON)
V_GS = -5…3 V
V_GS = 0 V, V_DS = 0…800 V
f = 1 MHz, V_AC = 50 mV, V_DS = 0 V,
V_GS = 0 V, T_j = 175 ºC
V_GS > 2.5 V, V_DS = 0 V, T_j = 175 ºC
Value
Typical
1403
30
9
55
40
11
44
55
2.6
0.19
Max. ^Unit
pF
pF
µJ
pF
pF
nC
nC
nC
Ω
Ω
Notes
Fig. 9
Fig. 9
Fig. 10
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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