GA08JT17-247 Datasheet, PDF(7/11 Page) GeneSiC Semiconductor, Inc. – Normally

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GA08JT17-247 Datasheet, PDF (7/11 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

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GA08JT17-247

B. Gate Drive Implementation Examples

Using the IXYS IX2204 Gate Driver

The IXYS IX2204 is a dual output gate drive integrated circuit which can be used to drive an SJT by supplying the required gate drive current

IG in a low-power gate drive solution. This configuration features an external gate capacitor, CG, which creates the brief current peak IG,on

during device turn-on and IG,off during turn-off for fast switching and an external gate resistor RG(EXT) to set the continuous gate current IG,steady

required for the device to remain on. This configuration is shown in Figure 22 with further details provided below.

Figure 22: Gate drive configuration using an IXYS IX2204 gate drive IC.

Table 1: Recommended Component List for implementing the IX2204 based Gate Drive for the GA08JT17-247

Reference

Component

Description

Suggested Part

RG(EXT)

RCG

DRG

QHA, QHB

QLA, QLB

Gate Resistance, External

Gate Capacitance

Damping Resistor

Silicon Schottky Diode

BJT Base Resistor

Current Boost NPN

Current Boost PNP

Signal Isolator

DC/DC Converter, VGH Supply

DC/DC Converter, VGL Supply

DC/DC Converter, VEE Supply

Voltage Supply Selection

2.0 â¦, 2 W

CRM2512-JW-2R2ELF

10 nF

C1812C103J1GACTU

1.0 â¦, 0.5 W

ERJ-1TYJ1R0U

40 V, 2 A

SS24T3G

1.0 â¦, 0.5 W

ERJ-1TYJ1R0U

40 V, 8 A, Silicon NPN BJT

MJD44H11

40 V, 8 A, Silicon PNP BJT

MJD45H11

Opto-Isolator âorâ Transformer Isolator ACPL-4800 / ADUM3210

VOUT = +20 V, VIN = +12 V, 2 W, VISO = 5.2

MGJ2D122005SC

VOUT = +5 V, VIN = +12 V, 3 W, VISO = 3.0 kV MEV3S1205SC

VOUT = -5 V, VIN = +12 V, 2 W, VISO = 5.2 kV MGJ2D122005SC

The IX2204 gate drive design requires three supply voltages VGH, VGL, and VEE (listed in Table 2) optionally supplied through DC/DC

converters. During device turn-on, VGH charges the external capacitor CG thereby delivering the narrow width, high current pulse IG,on to the

SJT gate and charges the SJTâs internal terminal capacitances CGD and CGS. For a given level of parasitic inductance in the gate circuit and

SJT package, the rise time of IG,on is controlled by the choice of VGH and CG. During the steady on-state, VGL in combination with the internal

and external gate resistances provides a continuous gate current for the GA08JT17-247 to remain on. The VEE supply sets the gate negative

during turn-off and steady off-state for faster switching and to avoid spurious turn-on which may be caused by external circuit noise. The

power rating of the voltage supplies should be adequate to meet the gate drive power requirements as determined by

Aug 2014

http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/

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