GA08JT17-247 Datasheet, PDF (1/11 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

GA08JT17-247
Normally – OFF Silicon Carbide
Junction Transistor
Features
 175 °C Maximum Operating Temperature
 Gate Oxide Free SiC Switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Coefficient of R_DS,ON
 Suitable for Connecting an Anti-parallel Diode
Package
 RoHS Compliant
D
V_DS
=
R_DS(ON)
=
I_{D @ Tc=125°C} =
h_{FE Tc=25°C} =
1200 V
230 mΩ
8A
60
D
S
D
G
TO-247AB
G
S
Advantages
 Compatible with Si MOSFET/IGBT Gate Drive ICs
 > 20 µs Short-Circuit Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
V_DS
I_D
I_GM
RBSOA
SCSOA
V_SG
V_SD
P_tot
T_stg
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Conditions
V_GS = 0 V
T_C = 125 °C
T_VJ = 175 ^oC, I_G = 1 A,
Clamped Inductive Load
T_VJ = 175 ^oC, I_G = 1 A, V_DS = 1200 V,
Non Repetitive
T_C = 125 °C
Value
1700
8
1.5
I_D,max = 8
@ V_DS ≤ V_DSmax
20
30
50
48
-55 to 175
Unit Notes
V
Fig. 6
A
Fig. 19
A
A
Fig. 16
µs
V
V
W
Fig. 14
°C
Electrical Characteristics
Parameter
On State Characteristics
Drain – Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
Min.
Value
Typical
Max. ^Unit
Notes
R_DS(ON)
V_GS(FWD)
h_FE
I_D = 8 A, T_j = 25 °C
I_D = 8 A, T_j = 125 °C
I_D = 8 A, T_j = 175 °C
I_G = 500 mA, T_j = 25 °C
I_G = 500 mA, T_j = 175 °C
V_DS = 5 V, I_D = 8 A, T_j = 25 °C
V_DS = 5 V, I_D = 8 A, T_j = 175 °C
230
410
mΩ
Fig. 5
560
3.0
2.8
V
Fig. 4
60
40
–
Fig. 5
V_R = 1700 V, V_GS = 0 V, T_j = 25 °C
I_DSS
V_R = 1700 V, V_GS = 0 V, T_j = 125 °C
V_R = 1700 V, V_GS = 0 V, T_j = 175 °C
I_SG
V_SG = 20 V, T_j = 25 °C
0.2
10
0.5
50 μA
Fig. 6
2.0
100
20
nA
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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