GA08JT17-247 Datasheet, PDF (2/11 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

GA08JT17-247
Electrical Characteristics
Parameter
Symbol
Capacitance Characteristics
Input Capacitance
Reverse Transfer/Output Capacitance
Output Capacitance Stored Energy
C_iss
C_rss/C_oss
E_OSS
Switching Characteristics¹
Internal Gate Resistance, Zero Bias
Internal Gate Resistance, On
Turn On Delay Time
Fall Time, V_DS
Turn Off Delay Time
Rise Time, V_DS
Turn On Delay Time
Fall Time, V_DS
Turn Off Delay Time
Rise Time, V_DS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
R_G(INT-ZERO)
R_G(INT-ON)
t_d(on)
t_f
t_d(off)
t_r
t_d(on)
t_f
t_d(off)
t_r
E_on
E_off
E_tot
E_on
E_off
E_tot
1 _{– All times are relative to the Drain-Source Voltage VDS}
Thermal Characteristics
Thermal resistance, junction - case
R_thJC
Conditions
V_GS = 0 V, V_D = 800 V, f = 1 MHz
V_D = 800 V, f = 1 MHz
V_GS = 0 V, V_D = 1000 V, f = 1 MHz
f = 1 MHz, V_AC = 25 mV, T_j = 175 ºC
V_GS > 2.5 V
T_j = 25 ºC, V_DS = 1100 V, I_D = 8 A,
R_G(EXT) = 20 Ω, C_G = 9 nF,
V_G = 20/-5 V, Load = 138 Ω
Refer to Fig. 20 for I_G Waveform
T_j = 175 ºC, V_DS = 1100 V, I_D = 8 A,
R_G(EXT) = 20 Ω, C_G = 9 nF,
V_G = 20/-5 V, Load = 138 Ω
Refer to Fig. 20 for I_G Waveform
T_j = 25 ºC, V_DS = 1100 V, I_D = 8 A,
R_G(EXT) = 20 Ω, C_G = 9 nF,
V_G = 20/-5 V, Load = 1.05 mH
T_j = 175 ºC, V_DS = 1100 V, I_D = 8 A,
R_G(EXT) = 20 Ω, C_G = 9 nF,
V_G = 20/-5 V, Load = 1.05 mH
Min.
Value
Typical
850
20
8.6
6.0
0.9
12
23
20
14
12
22
31
11
267
23
290
253
12
265
1.03
Max. ^{Unit Notes}
pF
Fig. 7
pF
Fig. 7
µJ
Fig. 8
Ω
Ω
ns
ns Fig. 9, 11
ns
ns Fig. 10, 12
ns
ns
Fig. 9
ns
ns Fig. 10
µJ Fig. 9, 11
µJ Fig. 10, 12
µJ
µJ
Fig. 9
µJ Fig. 10
µJ
°C/W Fig. 17
Figures
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 125 °C
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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