MB85R1002 Datasheet, PDF (7/12 Pages) Fujitsu Component Limited. – Memory FRAM

MB85R1002
(2) Write Operation
Parameter
Write Cycle Time
CE1 Active Time
CE2 Active Time
LB, UB Active Time
Pre-Charge Time
Address Setup Time
Address Hold Time
LB, UB Setup Time
Write Pulse Width
Data Setup Time
Data Hold Time
Write Setup Time
(VCC = 3.0 V to 3.6 V, TA = −20 ^oC to +85 ^oC)
Symbol
Value
Min
Max
Notes
tWC
250
⎯
ns
tCA1
210
2,000
ns
tCA2
210
2,000
ns
tBP
210
2,000
ns
tPC
40
⎯
ns
tAS
10
⎯
ns
tAH
50
⎯
ns
tBS
10
⎯
ns
tWP
210
⎯
ns
tDS
10
⎯
ns
tDH
50
⎯
ns
tWS
0
⎯
ns
(3) Power ON/OFF Sequence
Parameter
Sym-
bol
Min
CE1 LEVEL holding time in Power OFF
tpd
85
CE1 LEVEL holding time in Power ON
tpu
85
Power interval *
tpi
0.5
* : Condition for power detection circuit to function
Value
Typ
⎯
⎯
⎯
Units
Max
⎯
ns
⎯
ns
⎯
s
3. Pin Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol Test Condition
Min
CIN
VIN = GND
⎯
COUT
VOUT = GND
⎯
Value
Typ
⎯
⎯
(f = 1 MHz, TA = +25 ^oC)
Unit
Max
10
pF
10
pF
4. Reliability
Data retention 10 years (TA = 0 °C to +55 °C)
Access endurance 10¹⁰ times (TA = −20 °C to +85 °C)
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