MB85R1002 Datasheet, PDF (4/12 Pages) Fujitsu Component Limited. – Memory FRAM

MB85R1002
■ FUNCTION TRUTH TABLE
Mode
CE1 CE2 WE OE LB UB I/O1 to I/O8 I/O9 to I/O16 Supply Current
HXXXXX
Standby Pre-charge
XLXXXX
XXHHXX
High-Z
High-Z
Standby
(ISB)
XXXXHH
Read
LL
Dout
L
H
H
L
L
H
Dout
HL
High-Z
Dout
High-Z
Dout
Read
(Pseudo-SRAM,
OE control)
Write
LL
Dout
L HH
LH
Dout
HL
High-Z
LL
Din
L
H
L
X
L
H
Din
HL
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
Operation
(ICC)
Write
(Pseudo-SRAM,
WE control)
LH
LL
HLH
HL
Din
Din
High-Z
Din
High-Z
Din
Output Disable
L
HHHXX
High-Z
High-Z
Notes : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance
: Latch address at falling edge,
: Latch address at rising edge
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