MB85R1002 Datasheet, PDF (6/12 Pages) Fujitsu Component Limited. – Memory FRAM

MB85R1002
■ ELECTRICAL CHARACTERISTICS
1. DC CHARACTERISTICS
(VCC = 3.0 V to 3.6 V, TA = −20 ^oC to +85 ^oC)
Parameter
Symbol
Test Conditions
Value
Unit
Min Typ Max
Input Leakage Current
|ILI| VIN = 0 V to VCC
⎯
⎯ 10 µA
Output Leakage Current
|ILO| VOUT = 0 V to VCC, CE1 = VIH or OE = VIH
⎯
⎯ 10 µA
Supply Current
ICC CE1 = 0.2 V, CE2 = VCC−0.2 V, Iout = 0 mA*¹
⎯
⎯ 10 mA
CE1 ≥ VCC−0.2 V
Standby Current
CE2 ≤ 0.2 V*²
ISB
OE ≥ VCC−0.2 V, WE ≥ VCC−0.2 V*²
⎯
10 100 µA
LB ≥ VCC−0.2 V, UB ≥ VCC−0.2 V*²
Output Voltage (high)
VOH IOH = −2.0 mA
VCC x 0.8 ⎯ ⎯ V
Output Voltage (low)
VOL IOL = 2.0 mA
⎯
⎯ 0.4 V
*1 : Iout : Output current
*2 : All other inputs (CE1, CE2, OE, WE, LB, UB) should be at CMOS levels, i.e., H ≥ VCC − 0.2 V, L ≤ 0.2 V.
2. AC TEST CONDITIONS
Supply Voltage : 3.0 V to 3.6 V
Operating Temperature : −20 ^oC to +85 ^oC
Input Voltage Amplitude : 0.3 V to 2.7 V
Input Rising Time : 10 ns
Input Falling Time : 10 ns
Input Evaluation Level : 2.0 V / 0.8 V
Output Evaluation Level : 2.0 V / 0.8 V
Output Impedance : 50 pF
(1) Read Operation
Parametere
Read Cycle time
CE1 Active Time
CE2 Active Time
OE Active Time
LB, UB Active Time
Pre-charge Time
Address Setup Time
Address Hold Time
OE Setup Time
LB, UB Setup Time
CE1 Access Time
CE2 Access Time
OE Access Time
OE Output Floating Time
6
(VCC = 3.0 V to 3.6 V, TA = −20 ^oC to +85 ^oC)
Value
symbol
unit
Min
Max
tRC
250
⎯
ns
tCA1
210
2,000
ns
tCA2
210
2,000
ns
tRP
210
2,000
ns
tBP
210
2,000
ns
tPC
40
⎯
ns
tAS
10
⎯
ns
tAH
50
⎯
ns
tES
10
⎯
ns
tBS
10
⎯
ns
tCE1
⎯
100
ns
tCE2
⎯
100
ns
tOE
⎯
100
ns
tOHZ
⎯
25
ns