MB82DP04183C Datasheet, PDF (7/33 Pages) Fujitsu Component Limited. – 64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory

MB82DP04183C-65L
■ ELECTRICAL CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.)
1. DC CHARACTERISTICS
Parameter
Symbol
Test conditions
Input Leakage Current
Output Leakage Current
ILI
VSS ≤ VIN ≤ VDD
ILO
0 V ≤ VOUT ≤ VDD,
Output Disable
Value
Min Max
−1.0 +1.0
−1.0 +1.0
Output High Voltage Level VOH VDD = VDD Min, IOH = −0.5 mA
2.4
⎯
Output Low Voltage Level VOL IOL = 1 mA
⎯
0.4
VDD Power Down Current
IDDPS
IDDP8
IDDP16
VDD = VDD Max,
VIN = VIH or VIL,
CE2 ≤ 0.2 V
Sleep
⎯
10
8M-bit Partial ⎯
80
16M-bit Partial ⎯ 100
IDDS
VDD = VDD Max, VIN = VIH or VIL,
CE1 = CE2 = VIH
⎯
1.5
VDD Standby Current
IDDS1
VDD = VDD Max,
VIN ≤ 0.2 V or
VIN ≥ VDD − 0.2 V,
CE1 = CE2 ≥ VDD − 0.2 V
TA ≤ +85 ^oC
TA ≤ +40 ^oC
⎯ 170
⎯
90
VDD Active Current
IDDA1
IDDA2
VDD = VDD Max,
VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
IOUT = 0 mA
tRC/tWC = Min
⎯
40
tRC/tWC = 1 µs
⎯
5
VDD Page Read Current
IDDA3
VDD = VDD Max, VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
IOUT = 0 mA, tPRC = Min
⎯
10
Notes : • All voltages are referenced to VSS.
• DC characteristics are measured after following Power-up timing.
• IOUT depends on the output load conditions.
Unit
µA
µA
V
V
µA
µA
µA
mA
µA
mA
mA
mA
7