MB82DP04183C Datasheet, PDF (1/33 Pages) Fujitsu Component Limited. – 64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-11431-3E
MEMORY Mobile FCRAM^TM
CMOS
64M Bit (4 M word × 16 bit)
Mobile Phone Application Specific Memory
MB82DP04183C-65L
■ DESCRIPTION
The FUJITSU MB82DP04183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.
MB82DP04183C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in
comparison to regular SRAM.
This MB82DP04183C is suited for mobile applications such as Cellular Handset and PDA.
*: FCRAM is a trademark of Fujitsu Limited, Japan.
■ PRODUCT LINEUP
Parameter
Access time (Max) (tCE, tAA)
Active current (Max) (IDDA1)
Standby current (Max) (IDDS1)
Power down current (Max) (IDDPS)
MB82DP04183C-65L
65 ns
40 mA
90 µA
10 µA
■ FEATURES
• Asynchronous SRAM Interface
• Fast Access Cycle Time : tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = +2.6 V to +3.1 V
• Wide Operating Temperature : TA = -30 °C to +85 °C
• Byte Control by LB and UB
• Low Power Consumption : IDDA1 = 40 mA Max
IDDS1 = 90 µA Max ( TA = +40 °C)
• Various Power Down mode : Sleep
8M-bit Partial
16M-bit Partial
• Shipping Form : Wafer/Chip
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