MB85R1001 Datasheet, PDF (5/12 Pages) Fujitsu Component Limited. – 1 M Bit (128 K × 8)

MB85R1001
■ ELECTRICAL CHARACTERISTICS
1. DC CHARACTERISTICS
Parameter
Symbol
Test Condition
(VCC = 3.0 V to 3.6 V, TA = −20 °C to +85 °C)
Value
Unit
Min
Typ
Max
Input Leakage Current
|ILI| VIN = 0 V to VCC
⎯
⎯
10
µA
Output Leakage Current
|ILO|
VOUT = 0 V to VCC,
CE1 = VIH or OE = VIH
⎯
⎯
10
µA
Supply Current
ICC
CE1 = 0.2 V, CE2 = VCC−0.2 V,
Iout = 0 mA*¹
⎯
⎯
10
mA
CE1 ≥ VCC−0.2 V
Standby Current
ISB CE2 ≤ 0.2 V*²
⎯
10
100
µA
OE ≥ VCC−0.2 V, WE ≥ VCC−0.2 V*²
Output Voltage (high)
VOH IOH = −2.0 mA
0.8 x VCC ⎯
⎯
V
Output Voltage (low)
VOL IOL = 2.0 mA
⎯
⎯
0.4
V
*1 : Iout : Output current
*2 : All other inputs (CE1, CE2, OE, WE) should be at CMOS levels, i.e., H ≥ VCC − 0.2 V, L ≤ 0.2 V.
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