MB85R1001 Datasheet, PDF (1/12 Pages) Fujitsu Component Limited. – 1 M Bit (128 K × 8)

FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
1 M Bit (128 K × 8)
DS05-13103-2E
MB85R1001
■ DESCRIPTIONS
The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words
x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, MB85R1001 is able to retain data without back-up battery.
The memory cells used for the MB85R1001 has improved at least 10¹⁰ times of read/write access, significantly
outperforming FLASH memory and E²PROM in endurance.
The MB85R1001 used a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration : 131,072 words x 8bits
• Read/write endurance : 10¹⁰ times
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : -20 °C to +85 °C
• 48-pin, TSOP (1) plastic package
■ PACKAGE
48-pin plastic TSOP(1)
(FPT-48P-M25)