MBM29DL640E80 Datasheet, PDF (44/71 Pages) Fujitsu Component Limited. – 64 M (8 M X 8/4 M X 16) BIT Dual Operation

MBM29DL640E80/90/12
s ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Limits
Typ.
Max.
Sector Erase Time

1
10
Word Programming Time
Byte Programming Time

16
360

8
300
Chip Programming Time


200
Program/Erase Cycle
100,000


s TSOP (I) PIN CAPACITANCE
Parameter
Symbol
Condition
Input Capacitance
CIN
Output Capacitance
COUT
Control Pin Capacitance
CIN2
WP/ACC Pin Capacitance
CIN3
Note : Test conditions Ta = 25 °C, f = 1.0 MHz
VIN = 0
VOUT = 0
VIN = 0
VIN = 0
s FBGA PIN CAPACITANCE
Parameter
Symbol
Condition
Input Capacitance
CIN
Output Capacitance
COUT
Control Pin Capacitance
CIN2
WP/ACC Pin Capacitance
CIN3
Note : Test conditions Ta = 25 °C, f = 1.0 MHz
VIN = 0
VOUT = 0
VIN = 0
VIN = 0
Unit
Comments
s
µs
µs
s
cycle
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead

Value
Unit
Typ.
Max.
6
7.5
pF
8.5
12
pF
8
11
pF
9
11
pF
Value
Unit
Typ.
Max.
TBD
TBD
pF
TBD
TBD
pF
TBD
TBD
pF
TBD
TBD
pF
44