MBM29DL640E80 Datasheet, PDF (1/71 Pages) Fujitsu Component Limited. – 64 M (8 M X 8/4 M X 16) BIT Dual Operation

FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
64 M (8 M × 8/4 M × 16) BIT
Dual Operation
MBM29DL640E80/90/12
DS05-20887-1E
s DESCRIPTION
The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords
of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to
be programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase
operations. The device can also be reprogrammed in standard EPROM programmers.
The device is organized into four physical banks: Bank A, Bank B, Bank C and Bank D, which can be considered
to be four separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu’s
standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access
from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simulta-
neously taking place on the other bank.
(Continued)
s PRODUCT LINE UP
Part No.
Ordering Part No.
VCC
=
3.3
V +0.3 V
−0.3 V
VCC
=
3.0
V +0.6 V
−0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
MBM29DL640E
80



90
12
80
90
120
80
90
120
30
35
50
s PACKAGES
48-pin plastic TSOP (I)
Marking Side
48-pin plastic TSOP (I)
63-ball plastic FBGA
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
(BGA-63P-M02)