MB84VA2002 Datasheet, PDF (4/29 Pages) Fujitsu Component Limited. – 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

MB84VA2002-10/MB84VA2003-10
s PRODUCT LINE UP
Flash Memory
SRAM
Ordering Part No.
VCC
=
3.0
V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
MB84VA2002-10/MB84VA2003-10
100
100
100
100
40
50
s BUS OPERATIONS
Operation (1), (3)
Full Standby
Output Disable
Read from Flash (2)
Write to Flash
Read from SRAM
Write to SRAM
Flash Hardware Reset
Table 2 User Bus Operations (BYTE=VIL)
CEf CE1s CE2s OE
H
X
H
X
X
L
X
X
X
H
WE DQ0 to DQ7 DQ8 to DQ15
X
HIGH-Z
HIGH-Z
H
HIGH-Z
HIGH-Z
H
X
L
L
H
X
L
H
X
L
H
L
X
L
DOUT
DIN
HIGH-Z
HIGH-Z
H
L
H
L
H
DOUT
HIGH-Z
H
L
H
X
L
DIN
HIGH-Z
H
X
X
X
X
HIGH-Z
HIGH-Z
X
L
RESET
H
H
H
H
H
H
L
Operation (1), (3)
Full Standby
Output Disable
Read from Flash (2)
Write to Flash
Read from SRAM
Write to SRAM
Flash Hardware Reset
Table 3 User Bus Operations (BYTE=VIH)
CEf CE1s CE2s OE WE DQ0 to DQ7 DQ8 to DQ15
H
X
H
X
X
HIGH-Z
HIGH-Z
X
L
X
X
X
H
H
HIGH-Z
HIGH-Z
H
X
L
L
H
X
L
DOUT
DOUT
H
X
L
H
L
DIN
DIN
X
L
H
L
H
L
H
DOUT
HIGH-Z
H
L
H
X
L
DIN
HIGH-Z
H
X
X
X
X
HIGH-Z
HIGH-Z
X
L
RESET
H
H
H
H
H
H
L
Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels.
Notes: 1. Other operations except for indicated this column are inhibited.
2. WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
4. Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time.
4