MB84VA2002 Datasheet, PDF (11/29 Pages) Fujitsu Component Limited. – 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

MB84VA2002-10/MB84VA2003-10
s DC CHARACTERISTICS
Parameter _{Parameter Description}
Symbol
Test Conditions
Min. Typ. Max. Unit
ILI Input Leakage Current
—
–1.0
—
+1.0 µA
ILO Output Leakage Current
—
–1.0
—
+1.0 µA
Byte
—
—
22
tCYCLE = 10 MHz
ICC1f
Flash VCC Active Current
(Read)
VCCf = VCC
Max., CEf = VIL
OE = VIH
Word
Byte
—
—
25
mA
—
—
12
tCYCLE = 5 MHz
Word
—
—
15
ICC2f
Flash VCC Active Current
(Program/Erase)
VCCf = VCC Max., CEf
= VIL, OE = VIH
—
—
35 mA
ICC1s
SRAM VCC Active
Current
VCCs = VCC Max.,
tCYCLE =10 MHz
—
—
40 mA
CE1s = VIL, CE2s = VIH _{tCYCLE = 1 MHz}
—
—
12 mA
ICC2s
SRAM VCC Active
Current
CE1s = 0.2 V,
tCYCLE = 10 MHz —
—
35 mA
CE2s = VCCs – 0.2 V,
WE = VCCs – 0.2 V
tCYCLE = 1 MHz
—
—
6 mA
ISB1f
Flash VCC Standby
Current
VCCf = VCC Max., CEf = VCCf ± 0.3 V
RESET = VCCf ± 0.3 V
—
—
5 µA
ISB2f
Flash VCC Standby
Current (RESET)
VCCf = VCC Max., RESET = VSS ± 0.3 V
—
—
5 µA
ISB1s
SRAM VCC Standby
Current
CE1s = VIH or CE2s = VIL
—
—
2 mA
VCCs =
3.0 V
±10%
TA = 25°C
TA = –20 to
+85°C
—
1
2.5 µA
—
—
55 µA
ISB2s**
SRAM VCC Standby
Current
CE1s = VCC –
0.2 V or CE2s
= 0.2 V
VCCs =
3.3 V
±0.3 V
TA = 25°C
TA = –20 to
+85°C
TA = 25°C
—
1.5
3 µA
—
—
60 µA
—
1
2 µA
VCCs =
3.0 V
TA = –20 to
+40°C
TA = –20 to
+85°C
—
—
5 µA
—
—
50 µA
VIL Input Low Level
—
–0.3
—
0.6 V
VIH Input High Level
—
2.2
— VCC+0.3* V
VOL
Output Low Voltage
Level
IOL = 2.1 mA,
VCCf = VCCs = VCC Min.
—
—
0.4 V
VOH
Output High Voltage
Level
IOH = –500 µA,
VCCf = VCCs = VCC Min.
VCC – 0.5
—
—V
VLKO
Flash Low VCC Lock-Out
Voltage
—
2.3
—
2.5 V
* : VCC indicate lower of VCCf or VCCs
** :During standby mode with CE1s = VCCS – 0.2 V, CE2s should be CE2s < 0.2V or CE2s > VCCS – 0.2V
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