MB84VD2218XEC Datasheet, PDF (30/61 Pages) Fujitsu Component Limited. – 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD2218XEC/EE/2219XEC/EE-90
Table 5 Flash Memory Command Definitions
Command
Sequence
Bus First Bus Second Bus
Write _{Write Cycle Write Cycle}
Cycles
Req’d _{Addr. Data Addr. Data}
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr. Data Addr. Data Addr. Data Addr. Data
Read/Reset (Note 1) 1 XXXH F0H —
—
—
———————
Read/Reset Word
(Note 1)
Byte
3
555H
2AAH
AAH
55H
AAAH
555H
555H
F0H RA RD
AAAH
—
—
—
—
Word
555H
2AAH
(BA)
555H
Autoselect
3
AAH
55H
90H — — — — — —
Byte
AAAH
555H
(BA)
AAAH
Program
Word
555H
2AAH
555H
4
AAH
55H
A0H PA PD — — — —
Byte
AAAH
555H
AAAH
Word
555H
2AAH
555H
555H
2AAH
555H
Chip Erase
6
AAH
55H
80H
AAH
55H
10H
Byte
AAAH
555H
AAAH
AAAH
555H
AAAH
Word
555H
2AAH
555H
555H
2AAH
Sector Erase
6
AAH
55H
80H
AAH
55H SA 30H
Byte
AAAH
555H
AAAH
AAAH
555H
Sector Erase
Suspend
1
BA B0H —
—
—
———————
Sector Erase
Resume
1
BA 30H —
—
—
———————
Set to
Fast Mode
Word
555H
2AAH
555H
3
AAH
55H
20H —
Byte
AAAH
555H
AAAH
—
—
—
—
—
Fast Program ^Word
(Note 2)
Byte
2
XXXH A0H PA
PD
—
———————
Reset from Word
Fast Mode
(Note 2)
2
Byte
BA
90H
XXXH
F0H
(Note6)
—
———————
Extended
Sector Group
Word
Protection
(Note 3)
Byte
4
XXXH 60H SPA
60H
SPA 40H SPA SD —
—
—
—
Query
(Note 4)
Word
55H
1
98H —
—
Byte
AAH
—
———————
Word
555H
2AAH
555H
Hi-ROM Entry
3
AAH
55H
88H — — — — — —
Byte
AAAH
555H
AAAH
Hi-ROM
Program
(Note 5)
Word
555H
2AAH
555H
4
AAH
55H
A0H PA PD — — — —
Byte
AAAH
555H
AAAH
Hi-ROM
Erase
(Note 5)
Word
555H
2AAH
555H
555H
2AAH
6
AAH
55H
80H
AAH
55H HRA 30H
Byte
AAAH
555H
AAAH
AAAH
555H
Hi-ROM Exit
(Note 5)
Word
Byte
4
555H
2AAH
(HRBA)
555H
AAH
55H
90H XXXH 00H —
AAAH
555H
(HRBA)
AAAH
—
—
—
Notes: 1. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
2. This command is valid while Fast Mode.
3. This command is valid while RESET=VID.
4. The valid Address is A0 to A6.
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