MB84VA2102 Datasheet, PDF (26/29 Pages) Fujitsu Component Limited. – 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM

MB84VA2102-10/MB84VA2103-10
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Sector Erase Time
Programming Time
Chip Programming Time
Erase/Program Cycle
Min.
—
Limits
Typ.
1
—
16
—
16.8
100,000
—
Max.
15
5,200
100
—
Unit
Comment
sec
Excludes programming time
prior to erasure
µs
Excludes system-level
overhead
sec
Excludes system-level
overhead
cycles
s DATA RETENTION CHARACTERISTICS (SRAM)
Parameter
Symbol
Parameter Description
VDH Data Retention Supply Voltage
IDDS2 Standby Current
tCDR Chip Deselect to Data Retention Mode Time
tR
Recovery Time
* : 5 µA (Max.) at TA = –20°C to +40°C
Min.
2.0
VDH = 3.0 V —
VDH = 3.6 V —
0
5
Typ.
—
—
—
—
—
Max.
3.6
50*
60
—
—
Unit
V
µA
µA
ns
ms
• CE1s Controlled Data Retention Mode (Note 1)
VCCs
2.7 V
DATA RETENTION MODE
VIH
CE1s
GND
See Note 2
tCDR
VCCS –0.2 V
See Note 2
tR
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