MB84VA2102 Datasheet, PDF (15/29 Pages) Fujitsu Component Limited. – 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM

MB84VA2102-10/MB84VA2103-10
• Erase/Program Operations (Flash)
Parameter Symbols
JEDEC Standard
Description
tAVAV
tWC Write Cycle Time
tAVWL
tAS Address Setup Time (WE to Addr.)
tAVEL
tAS Address Setup Time (CEf to Addr.)
tWLAX
tAH Address Hold Time (WE to Addr.)
tELAX
tAH Address Hold Time (CEf to Addr.)
tDVWH
tDS
Data Setup Time
tWHDX
tDH
Data Hold Time
—
tOES Output Enable Setup Time
Read
—
tOEH Output Enable Hold Time
Toggle and Data Polling
tGHEL
tGHEL Read Recover Time Before Write (OE to CEf)
tGHWL
tGHWL Read Recover Time Before Write (OE to WE)
tWLEL
tWS WE Setup Time (CEf to WE)
tELWL
tCS CEf Setup Time (WE to CEf)
tEHWH
tWH WE Hold Time (CEf to WE)
tWHEH
tCH CEf Hold Time (WE to CEf)
tWLWH
tWP Write Pulse Width
tELEH
tCP
CEf Pulse Width
tWHWL
tWPH Write Pulse Width High
tEHEL
tCPH CEf Pulse Width High
tWHWH1
tWHWH1 Programming Operation
tWHWH2
tWHWH2 Sector Erase Operation (Note 1)
—
tVCS
VCCf Setup Time
—
tVLHT Voltage Transition Time (Note 2)
—
tVIDR Rise Time to VID (Note 2)
—
tRB Recover Time from RY/BY
—
tRP RESET Pulse Width
—
tRH RESET Hold Time Before Read
—
tEOE Delay Time from Embedded Output Enable
—
tBUSY Program/Erase Valid to RY/BY Delay
Note : 1. This does not include the preprogramming time.
2. This timing is for Sector Protection Operation.
Min.
100
0
0
50
50
50
0
0
0
10
0
0
0
0
0
0
50
50
30
30
—
—
—
50
4
500
0
500
200
—
—
-10
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
16
1
—
—
—
—
—
—
—
—
—
Unit
Max.
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— µs
— sec
15 sec
— µs
— µs
— ns
— ns
— ns
— ns
100 ns
90 ns
15