MB84VA2102 Datasheet, PDF (22/29 Pages) Fujitsu Component Limited. – 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM

MB84VA2102-10/MB84VA2103-10
• Read Cycle (SRAM)
Parameter
Symbol
Parameter Description
tRC
Read Cycle Time
tAA
Address Access Time
tCO1 Chip Enable (CE1s) Access Time
tCO2 Chip Enable (CE2s) Access Time
tOE
Output Enable Access Time
tCOE Chip Enable (CE1s Low and CE2s High) to Output Active
tOEE Output Enable Low to Output Active
tOD
Chip Enable (CE1s High or CE2s Low) to Output High-Z
tODO Output Enable High to Output High-Z
tOH
Output Data Hold Time
• Read Cycle (Note 1) (SRAM)
Min.
100
—
—
—
—
5
0
—
—
10
Max.
Unit
—
ns
100
ns
100
ns
100
ns
50
ns
—
ns
—
ns
40
ns
40
ns
—
ns
ADDRESSES
CE1s
CE2s
OE
DQ
tRC
tAA
tCO1
tCOE
tCO2
tOE
tOEE
tCOE
tOH
tOD
tOD
tODO
VALID DATA OUT
Note: 1. WE remains HIGH for the read cycle.
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