MB84VA2004 Datasheet, PDF (26/29 Pages) Fujitsu Component Limited. – 8M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM

MB84VA2004-10/MB84VA2005-10
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Sector Erase Time
Byte Programming Time
Chip Programming Time
Erase/Program Cycle
Limits
Min.
Typ.
—
1
—
8
—
12
100,000
—
Max.
15
3,600
50
—
Unit
Comment
sec
Excludes programming time
prior to erasure
µs
Excludes system-level
overhead
sec
Excludes system-level
overhead
cycles
s DATA RETENTION CHARACTERISTICS (SRAM)
Parameter
Symbol
Parameter Description
Min. Typ. Max. Unit
VDH Data Retention Supply Voltage
2.0
—
3.6
V
IDDS2 Standby Current
VDH = 3.0 V —
VDH = 3.6 V —
—
30*
µA
—
40
µA
tCDR Chip Deselect to Data Retention Mode Time
0
—
—
ns
tR
Recovery Time
5
—
—
ms
* : 3 µA (Max.) at TA = –20°C to +40°C
• CE1s Controlled Data Retention Mode (Note 1)
VCCs
2.7 V
DATA RETENTION MODE
VIH
CE1s
GND
See Note 2
tCDR
Note: Test conditions TA = 25°C, f = 1.0 MHz
26
VCCS –0.2 V
See Note 2
tR