MB85RS256_09 Datasheet, PDF (1/20 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 256 K (32 K × 8) Bit SPI

FUJITSU MICROELECTRONICS
DATA SHEET
Memory FRAM
CMOS
256 K (32 K × 8) Bit SPI
MB85RS256
DS05-13105-3E
■ DESCRIPTION
MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits,
using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory
cells.
MB85RS256 adopts the Serial Peripheral Interface (SPI).
The MB85RS256 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS256 can be used for 10¹⁰ read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E²PROM.
MB85RS256 does not take long time to write data unlike Flash memories nor E²PROM, and MB85RS256 takes
no wait time.
■ FEATURES
• Bit configuration
• Operating power supply voltage
• Operating frequency
• Serial Peripheral Interface
• Operating temperature range
• Data retention
• High endurance
• Package
: 32,768 words × 8 bits
: 3.0 V to 3.6 V
: 15 MHz (Max)
: SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
: −20 °C to +85 °C
: 10 years (+55 °C)
: 10 Billion Read/writes
: 8-pin plastic SOP (FPT-8P-M02)
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2009.8