MB82DP04184E-65L Datasheet, PDF (1/31 Pages) Fujitsu Component Limited. – 64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-11447-1E
MEMORY Mobile FCRAM^TM
CMOS
64M Bit (4 M word × 16 bit)
Mobile Phone Application Specific Memory
MB82DP04184E-65L
■ DESCRIPTION
The Fujitsu MB82DP04184E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.
This MB82DP04184E is suited for mobile applications such as Cellular Handset and PDA.
*: FCRAM is a trademark of Fujitsu Limited, Japan.
■ FEATURES
• Asynchronous SRAM Interface
• Fast Access Time : tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = 2.6 V to 3.1 V
• Wide Operating Temperature : TA = 0 °C to + 70 °C
• Byte Control by LB and UB
• Low Power Consumption : IDDA1 = 40 mA Max
IDDS1 = 200 µA Max
• Various Power Down mode : Sleep
8M-bit Partial
16M-bit Partial
• Shipping Form : Wafer, Chip, 71-ball plastic FBGA
■ MAIN SPECIFICATIONS
Parameter
Access Time (Max) (tCE, tAA)
Active Current (Max) (IDDA1)
Standby Current (Max) (IDDS1)
Power Down Current (Max) (IDDPS)
MB82DP04184E-65L
65 ns
40 mA
200 µA
10 µA
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