English
Language : 

1MBI800U4B-120 Datasheet, PDF (9/13 Pages) Fuji Electric – IGBT MODULE
◁
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
2000
1600
VGE=20V 15V 12V
1200
10V
800
400
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
2000
1600
1200
Tj=25oC
Tj=125oC
800
400
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25oC
1000.0
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
2000
1600
VGE=20V 15V
12V
1200
10V
800
400
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4
2
Ic=1600A
Ic=800A
Ic=400A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=800A, Tj=25oC
100.0
Cies
VGE
10.0
1.0
0
Cres
Coes
10
20
30
Collector-Emitter voltage : VCE [ V ]
VCE
0
0 500 1000 1500 2000 2500 3000 3500 4000
Gate charge : Qg [ nC ]
MS5F6041
a
9
13
H04-004-03a
 ▷