1MBI800U4B-120 Datasheet, PDF (10/13 Pages) Fuji Electric – IGBT MODULE

Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=0.68Ω, Tj=25^oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=0.68Ω, Tj=125^oC
10000
1000
100
toff
ton
tr
tf
10
0
400
800
1200
Collector current : Ic [ A ]
1600
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=800A, VGE=±15V, Tj=25^oC
10000
ton
1000
toff
tr
100
tf
10
0.10
1.00
10.00
Gate resistance : RG [ Ω ]
100.00
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=800A, VGE=±15V, Tj=125^oC
160
Eoff
140
120
Eon
100
80
60
40
Err
20
0
0.10
1.00
10.00
Gate resistance : RG [ Ω ]
100.00
1000
100
ton
toff
tr
tf
10
0
400
800
1200
Collector current : Ic [ A ]
1600
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=0.68Ω
160
Eoff(125^oC)
140
120
100
Eoff(25^oC)
Err(125^oC)
80
60
Eon(125^oC)
Err(25^oC)
40
Eon(25^oC)
20
0
0 200 400 600 800 1000 1200 1400 1600
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 0.68Ω, Tj <= 125^oC
2000
1600
1200
800
400
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
MS5F6041
10
a
13
H04-004-03a