1MBI800U4B-120 Datasheet, PDF (4/13 Pages) Fuji Electric – IGBT MODULE

3. Absolute Maximum Ratings ( at Tc= 25^oC unless otherwise specified )
It em s
Symbols
Conditions
Collector-Emitter voltage
Gate-Emitter voltage
VCES
VGES
Ic
Continuous
Collector current
Icp
1ms
-Ic
-Ic pulse 1ms
Collector Power Dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation
voltage
between terminal and copper base (*1)
Viso
AC : 1min.
Screw
Torque
Mounting (*2)
Terminals (*3)
Terminals (*4)
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 3.5 to 4.5 Nm (M6)
(*3) Recommendable Value : Terminals 10.0 to 11.0 Nm (M8)
(*4) Recommendable Value : Terminals 1.3 to 1.7 Nm (M4)
Tc=25^oC
Tc=80^oC
Tc=25^oC
Tc=80^oC
Max i m u m
Ratings
1200
±20
1200
800
2400
1600
800
1600
4805
+150
-40 to +125
Units
V
V
A
W
o_C
2500
VAC
4.5
11.0
Nm
1.7
4. Electrical characteristics ( at Tj= 25^oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics
min.
typ.
m ax .
Zero gate voltage
collector current
ICES
VCE=1200V
VGE=0V
-
-
8.0
Gate-Emitter
leakage current
IGES
VCE=0V
VGE=±20V
-
-
1600
Gate-Emitter
threshold voltage
VGE(th)
VCE=20V
Ic=800mA
4.5
6.5
8.5
VCE(sat) Ic=800A
Tj=25^oC
-
a _2.30 a _2.45
Collector-Emitter
(terminal) VGE=15V
Tj=125^oC
-
a _2.50
-
saturation voltage
VCE(sat)
Tj=25^oC
-
1.90
2.05
(chip)
Tj=125^oC
-
2.10
-
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
90
-
ton
Vcc=600V
-
0.32
1.20
Turn-on time
tr
Ic=800A
-
0.10
0.60
tr(i)
VGE=±15V
-
0.03
-
Turn-off time
toff
RG=0.68Ω
tf
-
0.41
1.00
-
0.07
0.30
VF
IF=800A
Tj=25^oC
-
a _2.00 a _2.15
Forward on voltage
(terminal)
VF
VGE=0V
Tj=125^oC
Tj=25^oC
-
a _2.10
-
1.65
-
1.80
(chip)
Tj=125^oC
-
1.75
-
Reverse recovery time
trr
IF=800A
-
-
0.35
Lead resistance,
terminal-chip (*5)
R lead
-
0.30
-
(*5) Biggest internal terminal resistance among arm.
Units
mA
nA
V
V
nF
us
V
us
mΩ
MS5F6041
4
a
13
H04-004-03a