1MBI400U4-120 Datasheet, PDF (9/13 Pages) Fuji Electric – IGBT MODULE

Collector current vs. Collector-Emitter voltage (typ.)
Tj=25^oC / chip
1000
800
VGE=20V15V 12V
600
400
10V
200
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
1000
800
Tj=25^oC
Tj=125^oC
600
400
200
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25^oC
100.0
Cies
10.0
1.0
0
Cres
Coes
10
20
30
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125^oC / chip
1000
800
VGE=20V 15V
12V
600
400
10V
200
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25^oC / chip
10
8
6
4
2
Ic=800A
Ic=400A
Ic=200A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=400A, Tj=25^oC
VGE
VCE
0
0
500
1000
1500
2000
Gate charge : Qg [ nC ]
MS5F6039
9
13
H04-004-03a